Number of found documents: 526
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Realizace nového optického tenkovrstvého ochranného prvku
Hubička, Zdeněk; Čada, Martin; Olejníček, Jiří; Kšírová, Petra; Tvarog, Drahoslav; Houha, R.; Matulová, L.
2019 - Czech
Byl vyvinut nový ochranný optický prvek s polovodivou tenkou vrstvou, která měla definované elektrické a optické vlastnosti. A new optical protection element was developed with a semiconductor thin film with defined electrical and optical properties.\n Keywords: optical thin film; sputtering; semiconductor; impedance Available at various institutes of the ASCR
Realizace nového optického tenkovrstvého ochranného prvku

Byl vyvinut nový ochranný optický prvek s polovodivou tenkou vrstvou, která měla definované elektrické a optické vlastnosti....

Hubička, Zdeněk; Čada, Martin; Olejníček, Jiří; Kšírová, Petra; Tvarog, Drahoslav; Houha, R.; Matulová, L.
Fyzikální ústav, 2019

Relation between optical and microscopic properties of hydrogenated silicon thin films with integrated germanium and tin nanoparticles
Stuchlík, Jiří; Stuchlíková, The-Ha; Čermák, Jan; Kupčík, Jaroslav; Fajgar, R.; Remeš, Zdeněk
2019 - English
The hydrogenated amorphous silicon layers (a-Si:H) were deposited by PECVD method on quartz substrates. During interruption of PECVD process the vacuum chamber was pumped up to 10-5 Pa and 1 nm thin films of Germanium or Tin were evaporated on the surface. The materials form isolated nanoparticles (NPs) on the a-Si:H surface. Then the deposited NPs were covered and stabilized by a-Si:H layer by PECVD. Those two deposition processes were alternated 5 times. The a-Si:H thin films with integrated Ge or Sn NPs were characterized optically by PDS and CPM methods, and microscopically by SEM and AFM microscopies. Optical and microscopic properties of the structures are correlated and discussed considering their application in photovoltaics.\n Keywords: thin films; a-Si:H; nanoparticles; germanium; tin Available at various institutes of the ASCR
Relation between optical and microscopic properties of hydrogenated silicon thin films with integrated germanium and tin nanoparticles

The hydrogenated amorphous silicon layers (a-Si:H) were deposited by PECVD method on quartz substrates. During interruption of PECVD process the vacuum chamber was pumped up to 10-5 Pa and 1 nm thin ...

Stuchlík, Jiří; Stuchlíková, The-Ha; Čermák, Jan; Kupčík, Jaroslav; Fajgar, R.; Remeš, Zdeněk
Fyzikální ústav, 2019

Topological structures in ferroic materials: Book of Abstracts of the International Workshop TOPO2019
Hlinka, Jiří; Pokorný, Jan; Bubnov, Alexej
2019 - English
This is the Book of Abstracts for the International Workshop on Topological Structures in Ferroic Materials (TOPO2019 conference) held in Pruhonice-Prague on June 16-20, 2019. The special objective of the conference is expressed in the conference title: Topological Structures in Ferroic Materials. The continuous worldwide interest to this conference series is proving that it has a respected position within the series of International conferences covering all interdisciplinary field of the research. The fifth TOPO meeting in Prague 2019 was aiming to bring together the forefront science experts as well as young scientists interested in topological aspects of magnetic, superconducting, ferroelectric as well as liquid crystal matter, and mutually benefit from the beauty of the existing unifying scientific perspective. At the TOPO2019 conference more than 90 participants from 20 countries all over the world presented about 50 lectures.\n Keywords: ferroic materials; topological structures Available at various institutes of the ASCR
Topological structures in ferroic materials: Book of Abstracts of the International Workshop TOPO2019

This is the Book of Abstracts for the International Workshop on Topological Structures in Ferroic Materials (TOPO2019 conference) held in Pruhonice-Prague on June 16-20, 2019. The special objective of ...

Hlinka, Jiří; Pokorný, Jan; Bubnov, Alexej
Fyzikální ústav, 2019

MOVPE GaN/AlGaN HEMT nano-structures
Hulicius, Eduard; Kuldová, Karla; Hospodková, Alice; Pangrác, Jiří; Dominec, Filip; Humlíček, J.; Pelant, Ivan; Cibulka, Ondřej; Herynková, Kateřina
2019 - English
GaN/AlGaN-based high electron mobility transistors (HEMTs) attain better performance than their state-of-the-art full silicon-based counterparts do, offering higher power, higher frequency as well as higher temperature of operation and stability, although their voltage and current limits are somewhat lower than for the SiC-based HEMTs. GaN/AlGaN-based HEMTs are a potential choice for electric-powered vehicles, for which they are approved not only for their power parameters, but also for their good temperature stability, lifetime and reliability. It is important to optimize HEMT structures and their growth parameters to reach the optimum function for the real-world applications. HEMT structures were grown by MOVPE technology in AIXTRON apparatus on (111)-oriented single-surface polished Si substrates. Structural, optical and transport properties of the structures were measured by X-ray diffraction, optical reflectivity, time-resolved photoluminescence and micro-Raman spectroscopy.\n Keywords: GaN; MOVPE; HEMT Available at various institutes of the ASCR
MOVPE GaN/AlGaN HEMT nano-structures

GaN/AlGaN-based high electron mobility transistors (HEMTs) attain better performance than their state-of-the-art full silicon-based counterparts do, offering higher power, higher frequency as well as ...

Hulicius, Eduard; Kuldová, Karla; Hospodková, Alice; Pangrác, Jiří; Dominec, Filip; Humlíček, J.; Pelant, Ivan; Cibulka, Ondřej; Herynková, Kateřina
Fyzikální ústav, 2019

New binary refractory metal-Fe intermetallic compounds for hard magnet applications
Tchaplianka, Maxim; Shick, Alexander
2019 - English
We investigate theoretically the electronic and magnetic structure of Fe2Hf. The density functional theory is used to calculate the magnetic moments on individual atoms, the total and projected densities of states, and the magnetic anisotropy energy. The Fe2Hf is found to be metallic and ferrimagnetic, with the magnetic moments of Fe and Hf atoms pointing in the opposite directions. The negative magnetic anisotropy, and the “in-plane” preferential direction of the magnetization are found as a result of theoretical calculations. Our study suggests that the chemical control of the magnetic anisotropy has to be investigated in order to evaluate the potential of Fe2Hf for the permanent magnet applications.\n Keywords: electronic structure; magnetic anisotropy; permanent magnets Available at various institutes of the ASCR
New binary refractory metal-Fe intermetallic compounds for hard magnet applications

We investigate theoretically the electronic and magnetic structure of Fe2Hf. The density functional theory is used to calculate the magnetic moments on individual atoms, the total and projected ...

Tchaplianka, Maxim; Shick, Alexander
Fyzikální ústav, 2019

The photoluminescence and optical absorptance of plasma hydrogenated nanocrystalline ZnO thin films
Remeš, Zdeněk; Chang, Yu-Ying; Stuchlík, Jiří; Mičová, J.
2019 - English
We have developed the technology of the deposition of the nominally undoped ZnO nanocrystalline thin films by DC reactive magnetron sputtering of Zn target in the gas mixture of argon and oxygen plasma. We have optimized the photoluminescence spectroscopy for measuring optically scattering thin layers with the high sensitivity, precise sample positioning and very low influence of the scattered excitation light. Here we present the latest results on the enhancement of the photoluminescence of the nanocrystalline ZnO thin films after plasma hydrogenation. The photoluminescence in near UV region has been enhanced whereas the deep defect related photoluminescence has been significantly decreased. We found good room temperature stability of the plasma hydrogenated ZnO nanocrystals in air, but fast degradation at elevated temperature\n Keywords: nanomaterials; ZNO; photoluminescence; magnetron sputtering Available at various institutes of the ASCR
The photoluminescence and optical absorptance of plasma hydrogenated nanocrystalline ZnO thin films

We have developed the technology of the deposition of the nominally undoped ZnO nanocrystalline thin films by DC reactive magnetron sputtering of Zn target in the gas mixture of argon and oxygen ...

Remeš, Zdeněk; Chang, Yu-Ying; Stuchlík, Jiří; Mičová, J.
Fyzikální ústav, 2019

Germanium and tin nanoparticles encapsulated in amorphous silicon matrix for optoelectronic application
Stuchlíková, The-Ha; Remeš, Zdeněk; Stuchlík, Jiří
2019 - English
The plasma enhanced chemical vapour deposition was combined with in situ deposition of Ge and Sn thin film by evaporation technique at surface temperature about 220 °C to form nanoparticles on the surface of hydrogenated silicon thin films to prepare diodes. Formation of nanoparticles was additionally stimulated by plasma treatment through a low pressure hydrogen glow discharge. The diodes based on PIN diode structures with and without the embedded Ge or Sn nanoparticles were characterized by temperature dependence of electrical conductivity, activation energy of conductivity, measurement of volt-ampere characteristics in dark and under solar illumination\n Keywords: Ge NPs; a-Si:H; Sn NPs; diode structures; I-V characteristics Available at various institutes of the ASCR
Germanium and tin nanoparticles encapsulated in amorphous silicon matrix for optoelectronic application

The plasma enhanced chemical vapour deposition was combined with in situ deposition of Ge and Sn thin film by evaporation technique at surface temperature about 220 °C to form nanoparticles on the ...

Stuchlíková, The-Ha; Remeš, Zdeněk; Stuchlík, Jiří
Fyzikální ústav, 2019

The hydrogen plasma doping of ZnO thin films and nanoparticles
Remeš, Zdeněk; Neykova, Neda; Potocký, Štěpán; Chang, Yu-Ying; Hsu, H.S.
2018 - English
The optical absorptance and photoluminescence studies has been applied on the hydrogen and oxygen plasma treated, nominally undoped ZnO thin films and aligned nanocolumns grown on the nucleated glass substrate by the hydrothermal process in an oil bath containing a flask with ZnO nutrient solution. The localized defect states at 2.3 eV below the optical absorption edge were detected by photothermal deflection spectroscopy (PDS) in a broad spectral range from near UV to near IR. The optical absorptance spectroscopy shows that hydrogen doping increases free electron concentration changing ZnO to be electrically conductive (hydrogen doping).\n Keywords: ZnO; nanoparticles; hydrothermal growth; hotoluminescence spectroscopy; PDS Available at various institutes of the ASCR
The hydrogen plasma doping of ZnO thin films and nanoparticles

The optical absorptance and photoluminescence studies has been applied on the hydrogen and oxygen plasma treated, nominally undoped ZnO thin films and aligned nanocolumns grown on the nucleated glass ...

Remeš, Zdeněk; Neykova, Neda; Potocký, Štěpán; Chang, Yu-Ying; Hsu, H.S.
Fyzikální ústav, 2018

Book of Abstracts of the 28th Joint Seminar "Development of Materials Science in Research and Education"
Kožíšek, Zdeněk; Král, Robert; Zemenová, Petra
2018 - English
Topics:\n- Trends in development of materials research \n- Education of materials science at the universities\n- Information about the research programmes of individual institutions \n- Information on equipment for preparation and characterisation of materials \n- Results of materials science research Keywords: material sciences Available at various institutes of the ASCR
Book of Abstracts of the 28th Joint Seminar "Development of Materials Science in Research and Education"

Topics:\n- Trends in development of materials research \n- Education of materials science at the universities\n- Information about the research programmes of individual institutions \n- Information on ...

Kožíšek, Zdeněk; Král, Robert; Zemenová, Petra
Fyzikální ústav, 2018

Studium cesno-hafničitého chloridu metodami termické analýzy
Král, Robert; Zemenová, Petra; Bystřický, Aleš; Vaněček, Vojtěch; Kohoutková, M.
2018 - Czech
Tato práce se zabývá studiem procesů probíhajících při tepelném zatížení připraveného chloridu cesno-hafničitého (Cs2HfCl6) a jeho monokrystalu metodami termické analýzy: simultánní diferenciální skenovací kalorimetrií a termogravimetrií (DSC-TG) a termomechanickou analýzou (TMA). Výsledky prokázaly tepelnou nestabilitu Cs2HfCl6 a jeho rozklad na chlorid cesný a hafničitý nad eutektickou teplotou.\n This work deals with the study of processes in cesium hafnium chloride (Cs2HfCl6) and its single crystal under thermal treatment by thermal analyses (different scanning calorimetry, thermogravimetry and thermomechanical analysis). Results showed thermal instability of Cs2HfCl6 and its significant decomposition to cesium and hafnium chloride above the eutectic temperature. Keywords: Cs.sub.2./sub.HfCl.sub.6./sub.; DSC-TG; TMA; krystal Available at various institutes of the ASCR
Studium cesno-hafničitého chloridu metodami termické analýzy

Tato práce se zabývá studiem procesů probíhajících při tepelném zatížení připraveného chloridu cesno-hafničitého (Cs2HfCl6) a jeho monokrystalu metodami termické analýzy: simultánní diferenciální ...

Král, Robert; Zemenová, Petra; Bystřický, Aleš; Vaněček, Vojtěch; Kohoutková, M.
Fyzikální ústav, 2018

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