Preparation of Thin Layers of Ferromagnetic Semiconductors
Koštejn, Martin
2013 - English The paper reports on the experiments of preparation Mn diluted in Silicon. These materials are potential ferromagnetic semiconductors. Thin layer have been prepared by reactive pulsed laser deposition of Mn target under small pressure of volatile precursor (silane or germane). We estimate initial temperature 1 mn above surface as 1.9 eV. The prepared layers can contain 1-40% of Mn atoms in form of amorphous mixture of Mn and Si or nano-crystallized mixture of Mn and Ge. High temperature annealing or rapid laser annealing is needed for recrystallization of Mn:Si layers. Keywords: room temperature ferromagnetism; pulsed laser deposition; diluted magnetic semiconductors Available in a digital repository NRGL Preparation of Thin Layers of Ferromagnetic Semiconductors

The paper reports on the experiments of preparation Mn diluted in Silicon. These materials are potential ferromagnetic semiconductors. Thin layer have been prepared by reactive pulsed laser deposition ...

Koštejn, Martin
Ústav chemických procesů, 2013