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Preparation of Thin Layers of Ferromagnetic Semiconductors
Koštejn, Martin
2013 - English
The paper reports on the experiments of preparation Mn diluted in Silicon. These materials are potential ferromagnetic semiconductors. Thin layer have been prepared by reactive pulsed laser deposition of Mn target under small pressure of volatile precursor (silane or germane). We estimate initial temperature 1 mn above surface as 1.9 eV. The prepared layers can contain 1-40% of Mn atoms in form of amorphous mixture of Mn and Si or nano-crystallized mixture of Mn and Ge. High temperature annealing or rapid laser annealing is needed for recrystallization of Mn:Si layers.
Keywords:
room temperature ferromagnetism; pulsed laser deposition; diluted magnetic semiconductors
Available in a digital repository NRGL
Preparation of Thin Layers of Ferromagnetic Semiconductors
The paper reports on the experiments of preparation Mn diluted in Silicon. These materials are potential ferromagnetic semiconductors. Thin layer have been prepared by reactive pulsed laser deposition ...
Preparation of Hydrotreating Catalysts by Slurry Impregnation Method
Kaluža, Luděk
2001 - English
Available at various institutes of the ASCR
Preparation of Hydrotreating Catalysts by Slurry Impregnation Method
International Conference on Microwave Chemistry
Čermák, Jan; Hájek, Milan; Hetflejš, Jiří; Včelák, Jaroslav
1998 - English
Available at various institutes of the ASCR
International Conference on Microwave Chemistry
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