Number of found documents: 17
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Model of carrier multiplication due to impurity impact ionization in boron-doped diamond
Mortet, Vincent; Lambert, Nicolas; Hubík, Pavel; Soltani, A.
2019 - English
Boron-doped diamond exhibits a characteristic S-shaped I-V curve at room temperature [1] with two electrical conductivity states, i.e., low and high conductivity, at high electric fields (50 – 250 kV.cm-1) due to the carrier freeze-out and impurity impact ionization avalanche effect. To our knowledge, the carrier multiplication during the change of the conductivity state has not been studied. In this article, we investigate theoretically the effect of acceptor concentration and compensation level on the carrier multiplication coefficient at room temperature to determine the optimal dopants concentration of maximum carrier multiplication. The room temperature hole concentration of boron-doped diamond has been calculated for various acceptor concentration and compensation ratio by solving numerically the charge neutrality equation within the Boltzmann approximation of the Fermi-Dirac statistic.\n Keywords: Boron-doped diamond; semiconductor; carrier multiplication coefficient; impurity impact ionization Fulltext is available at external website.
Model of carrier multiplication due to impurity impact ionization in boron-doped diamond

Boron-doped diamond exhibits a characteristic S-shaped I-V curve at room temperature [1] with two electrical conductivity states, i.e., low and high conductivity, at high electric fields (50 – 250 ...

Mortet, Vincent; Lambert, Nicolas; Hubík, Pavel; Soltani, A.
Fyzikální ústav, 2019

ZnMg0.8Ca/Sr0.2 ternary alloys - the influence of the third element on material properties
Čapek, Jaroslav; Pinc, Jan; Kubásek, J.; Molnárová, Orsolya; Maňák, Jan; Drahokoupil, Jan
2019 - English
Zinc-based materials alloyed with the elements of the 2nd group of the periodic table have been studied as potential materials for the fabrication of various biodegradable implants. In this study, we prepared two ternary alloys: ZnMg0.8Ca0.2 (wt.%) and ZnMg0.8Sr0.2. The microstructure of both ternary alloys was similar, the main difference was in the size and morphology of the Ca/SrZn13 phase. The SrZn13 phase formed fine particles with a submicron size and had more significant hardening effect in the as-cast state compared to the CaZn13 phase. The annealing led to a transformation of the eutectic structure into the “massive” Mg2Zn11 phase which caused a significant increase of both hardness and compressive yield stress. In the annealed states, comparable hardness was observed for both alloys and higher compressive yield strength for the Ca-containing alloy. Keywords: biodegradable zinc alloys; mechanical properties; microstructure Available in digital repository of the ASCR
ZnMg0.8Ca/Sr0.2 ternary alloys - the influence of the third element on material properties

Zinc-based materials alloyed with the elements of the 2nd group of the periodic table have been studied as potential materials for the fabrication of various biodegradable implants. In this study, we ...

Čapek, Jaroslav; Pinc, Jan; Kubásek, J.; Molnárová, Orsolya; Maňák, Jan; Drahokoupil, Jan
Fyzikální ústav, 2019

Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure
Hájek, František; Hospodková, Alice; Oswald, Jiří; Slavická Zíková, Markéta
2018 - English
Luminescence of InGaN/GaN multiple quantum well (MQW) structure is strongly affected by spontaneous and piezoelectric polarizations. To suppress them, doping with shallow impurities (e. g. Si) can be used. This works presents the effects of Si doping in different layers around the MQW area. On the basis of photoluminescence and cathodoluminescence measurements and band structure simulation, the piezoelectric field is most efficiently reduced when both layers under and over MQW area are Si doped.\n Keywords: nitrides; quantum wells; luminescence; semiconductor doping Fulltext is available at external website.
Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure

Luminescence of InGaN/GaN multiple quantum well (MQW) structure is strongly affected by spontaneous and piezoelectric polarizations. To suppress them, doping with shallow impurities (e. g. Si) can be ...

Hájek, František; Hospodková, Alice; Oswald, Jiří; Slavická Zíková, Markéta
Fyzikální ústav, 2018

Controlled structuring of self–assembled polystyrene microsphere arrays by two different plasma systems
Domonkos, Mária; Ižák, Tibor; Štolcová, L.; Proška, J.; Kromka, Alexander
2013 - English
In this study we present a successful manipulation of microspheres by reactive ion etching (RIE). A self-assembled monolayer close-packed array of monodisperse polystyrene microspheres (PM) with diameter of 471 nm was used as the primary template. The PM templates were processed in two different RIE systems: (i) capacitively coupled radiofrequency plasma (CCP) and (ii) dual plasma system which combines CCP and pulsed linear-antenna microwave plasma (PLAMWP). The influence of process conditions on the PM geometry was systematically studied by scanning electron microscopy (SEM). The process conditions were controlled by varying radiofrequency (RF) power, gas mixture (O2:CF4 ratio) and process duration. Keywords: nanosphere lithography; reactive ion etching; pulsed linear-antenna microwave plasma; polystyrene microspheres; Langmuir-Blodgett monolayers Fulltext is available at external website.
Controlled structuring of self–assembled polystyrene microsphere arrays by two different plasma systems

In this study we present a successful manipulation of microspheres by reactive ion etching (RIE). A self-assembled monolayer close-packed array of monodisperse polystyrene microspheres (PM) with ...

Domonkos, Mária; Ižák, Tibor; Štolcová, L.; Proška, J.; Kromka, Alexander
Fyzikální ústav, 2013

Volumic dependence of nucleation barrier at critical supersaturation
Kožíšek, Zdeněk; Demo, Pavel; Sveshnikov, Alexey
2010 - English
Kinetic equations of nucleation are solved numerically to found conditions, under which first nuclei are formed. Critical supercooling is determined from the size distribution of nuclei. It is shown that nucleation barrier at critical supercooling depends logarithmically on droplet volume. Keywords: nucleation; critical supersaturation; nucleation barrier Fulltext is available at external website.
Volumic dependence of nucleation barrier at critical supersaturation

Kinetic equations of nucleation are solved numerically to found conditions, under which first nuclei are formed. Critical supercooling is determined from the size distribution of nuclei. It is shown ...

Kožíšek, Zdeněk; Demo, Pavel; Sveshnikov, Alexey
Fyzikální ústav, 2010

Equilibrium shape of a liquid nucleus on a highly curved surface of a nanofiber
Sveshnikov, Alexey; Demo, Pavel; Kožíšek, Zdeněk
2010 - English
Approximate equilibrium shape of a liquid nucleus on a nanofiber was determined by minimalization of its free energy under condition of the constant volume of the nucleus. The nucleus is stretched in the direction parallel to the nanofiber axis. The deviation of the shape from a sphere is larger for well-wetting cases. Keywords: nucleus shape; highly curved surface; nanofibers Fulltext is available at external website.
Equilibrium shape of a liquid nucleus on a highly curved surface of a nanofiber

Approximate equilibrium shape of a liquid nucleus on a nanofiber was determined by minimalization of its free energy under condition of the constant volume of the nucleus. The nucleus is stretched in ...

Sveshnikov, Alexey; Demo, Pavel; Kožíšek, Zdeněk
Fyzikální ústav, 2010

Testování oduhličené vrstvy oceli metodou Barkhausenova šumu
Stupakov, Oleksandr; Tomáš, Ivan; Skrbek, L.
2010 - Czech
Průmyslově nežádoucí proces oduhličení povrchové vrstvy běžné pružinové oceli ČSN 414260 (EN 54SiCr6) byl simulován žíháním na vzduchu při teplotě 800oC s různým časem výdrže v peci. Byly připraveny tři série vzorků s různě ošetřeným povrchem: (i) bez povrchové úpravy (s okujemi oxidů železa), (ii) s mořením v kyselině chlorovodíkové a (iii) s povrchem otryskaným pískem. Získané povrchové oduhličené vrstvy s tloušťkou v rozmezí 0,1-0,35 mm byly zkoumány optickým mikroskopem, vlnovým disperzním spektrometrem a metodou povrchové rentgenové difrakce. Magnetic Barkhausen noise technique was tested for applicability of non-destructive charaterization of the decarburized layer depth. A newly introduced parameter, Barkhausen noise coercivity, was proposed for practical use due to its sensitivity to the tested decarburization and its stability to the measurement conditions. Keywords: magnetic Barkhausen noise; surface magnetic field; surface decarburization; carbon steel; magnetic non-destructive testing Fulltext is available at external website.
Testování oduhličené vrstvy oceli metodou Barkhausenova šumu

Průmyslově nežádoucí proces oduhličení povrchové vrstvy běžné pružinové oceli ČSN 414260 (EN 54SiCr6) byl simulován žíháním na vzduchu při teplotě 800oC s různým časem výdrže v peci. Byly připraveny ...

Stupakov, Oleksandr; Tomáš, Ivan; Skrbek, L.
Fyzikální ústav, 2010

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