Ne (412)
Počet nalezených dokumentů:
412
Publikováno od
do
The intrinsic submicron ZnO thin films prepared by reactive magnetron sputtering
Remeš, Zdeněk; Stuchlík, Jiří; Purkrt, Adam; Chang, Yu-Ying; Jirásek, Vít; Štenclová, Pavla; Prajzler, V.; Nekvindová, P.
2017 - anglický
The DC reactive magnetron sputtering of metallic target in oxide atmosphere is a simple method of depositing the intrinsic (undoped) nanocrystalline layers of metal oxides. We have optimized the deposition of the intrinsic ZnO thin films with submicron thickness 50-500 nm on fused silica glass substrates and investigated the localized defect states below the optical absorption edge down to 0.01 % using photothermal deflection spectroscopy from UV to IR. We have shown that the defect density, the optical absorptance and the related optical attenuation in planar waveguides can be significantly reduced by annealing in air at 400 °C.
Klíčová slova:
ZnO; reactive magnetron sputtering; plasma treatment; photothermal deflection spectroscopy; optical spectroscopy
Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
The intrinsic submicron ZnO thin films prepared by reactive magnetron sputtering
The DC reactive magnetron sputtering of metallic target in oxide atmosphere is a simple method of depositing the intrinsic (undoped) nanocrystalline layers of metal oxides. We have optimized the ...
Hydrogen plasma treatment of ZnO thin films
Chang, Yu-Ying; Neykova, Neda; Stuchlík, Jiří; Purkrt, Adam; Remeš, Zdeněk
2017 - anglický
ZnO is an attractive wide band gap semiconductor with large exciton binding energy, high refractive index, high biocompatibility and diversety of nanostructure shapes which makes it suitable for many applications in the optoelectronic devices, optical sensors, and biosensors. We study the effect of hydrogen plasma treatment of the nominally undoped ZnO thin film deposited by DC reactive magnetron sputtering of Zn target in the gas mixture of argon and oxygen plasma. The SEM images show that the crystal size increases with film thickness. We confirm, that the electrical conductivity significantly increases after hydrogen plasma treatment by 4 orders of magnitude. Moreover, the increase of the infrared optical absorption, related to free carrier concentration, was detected below the optical absorption edge by the photothermal deflection spectroscopy.\n
Klíčová slova:
ZnO; reactive magnetron sputtering; hydrogen plasma treatment
Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Hydrogen plasma treatment of ZnO thin films
ZnO is an attractive wide band gap semiconductor with large exciton binding energy, high refractive index, high biocompatibility and diversety of nanostructure shapes which makes it suitable for many ...
Preparation of zinc oxide nanorods colloid from thin layers
Mičová, Júlia; Remeš, Zdeněk; Chang, Yu-Ying; Neykova, Neda
2017 - anglický
The interest in ZnO (zinc oxide) nanoparticles is increasing due to low cost of their processing as well as the ability of fabricating ZnO nanostructures with controllable morphology such as size, shape and orientation. Our choice of method of the preparation of the nanostructured thin ZnO layers is the hydrothermal growth of ZnO nanorods on glass substrates coated by the nucleation layer deposited by the reactive magnetron sputtering. We have developed and optimized conditions of the thin layer growth with controllable dimensions of nanorods followed by the ultrasound peeling. The colloid of ZnO nanorods was characterized by measuring the size of particles using the dynamic light scattering (DLS) and the scanning electron microscopy (SEM). We found that the dynamic light scattering (DLS) can’t be directly used for size evaluation of ZnO nanorods due to their non- sperical shape. \n
Klíčová slova:
ZnO; method hydrothermal growth; thin layer; nanorods
Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Preparation of zinc oxide nanorods colloid from thin layers
The interest in ZnO (zinc oxide) nanoparticles is increasing due to low cost of their processing as well as the ability of fabricating ZnO nanostructures with controllable morphology such as size, ...
DLC/TI thin films properties prepared by hybrid laser technologies
Mikšovský, Jan; Jelínek, Miroslav; Písařík, Petr; Kocourek, Tomáš; Remsa, J.; Jurek, Karel
2017 - anglický
Layers of diamond-like carbon are usable in many fields of industry as well as in medicine. Many scientific groups have worked with different types of deposition techniques to prepare DLC layers with improved or unique properties. The DLC properties could be improved by various dopations. In this study, we focused on DLC layers doped by titanium, prepared by hybrid laser depositions. Two techniques were used: Dual pulse laser deposition (DualPLD) and pulse laser deposition in combination with magnetron sputtering (PLD/MS). Preliminary tests for morphology, wettability, adhesion, hardness, corrosion, friction and wearability were examined. DLC samples were prepared on Si(100) wafer and on Ti6Al4V alloy substrates with titanium concentration from pure up to 25 at.%. Friction of the prepared layers ranged from 0.09 to 0.18. The films exhibited very low wear for loads 1 N and 2 N.\n
Klíčová slova:
DLC Friction; titanium doped; hybrid deposition
Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
DLC/TI thin films properties prepared by hybrid laser technologies
Layers of diamond-like carbon are usable in many fields of industry as well as in medicine. Many scientific groups have worked with different types of deposition techniques to prepare DLC layers with ...
Transfer of electrons or holes between localized states. Application to polymer electric conductivity
Král, Karel; Menšík, Miroslav
2017 - anglický
Basing on the quantum transport formalizm a formula for the irreversible transfer of charged particles has been introduced by us recently. This formula is expected to be suitable for the theoretical description of the electron or hole transfer between quantum dots, other nanoparticles, molecules, and so on. We discuss shortly the main physical properties of the formula. We also demonstrate the use of the formula for the theoretical analysis of the electronic physical properties of some electrically conductive polymers.\n
Klíčová slova:
electron transfer; electron-phonon interaction; quantum nanostructures; transfer rate formula; polymer conductivity
Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Transfer of electrons or holes between localized states. Application to polymer electric conductivity
Basing on the quantum transport formalizm a formula for the irreversible transfer of charged particles has been introduced by us recently. This formula is expected to be suitable for the theoretical ...
The deposition of germanium nanoparticles on hydrogenated amorphous silicon
Stuchlík, Jiří; Volodin, V.A.; Shklyaev, A.A.; Stuchlíková, The-Ha; Ledinský, Martin; Čermák, Jan; Kupčík, Jaroslav; Fajgar, Radek; Mortet, Vincent; More Chevalier, Joris; Ashcheulov, Petr; Purkrt, Adam; Remeš, Zdeněk
2017 - anglický
We reveal the mechanism of Ge nanoparticles (NPs) formation on the surface of the hydrogenated amorphous silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on ITO and a on boron doped nanocrystalline diamond (BDD). The coating of Ge NPs on a-Si:H was performed by molecular beam epitaxy (MBE) at temperatures up to 450 °C. The Ge NPs were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The nanocrystalline Ge particles are conglomerates of nanocrystals of size 10-15 nm and quantum dots (QDs) with size below 2 nm embedded in amorphous Ge phase. After coating with Ge NPs the a-Si:H thin films show better adhesion on BDD substrates then on ITO substrates.
Klíčová slova:
Ge nanoparticles; a-Si:H; PECVD; MBE
Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
The deposition of germanium nanoparticles on hydrogenated amorphous silicon
We reveal the mechanism of Ge nanoparticles (NPs) formation on the surface of the hydrogenated amorphous silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on ITO and a on ...
Transparent boron-doped diamond electrode (t-BDDE) for spectroelectrochemistry
Lušpai, K.; Keszeliová, D.; Barlog, M.; Petrák, Václav
2017 - anglický
In this work we have studied the properties of high quality boron-doped diamond layers prepared on transparent substrate and their use as working electrode for EPR/UV-VIS-NIR spectroelectrochemistry. Final goal of this work is to benefit from the wide potential window of boron-doped diamond electrodes even in the field of the EPR/UV-VIS-NIR spectroelectrochemistry. The studied electrodes are compatiable with UV-VIS-NIR measurements. Spectral background is stable within the whole electrochemical window. Some of the electrodes, with lower doping level, are also compatible with EPR spectroscopy. In this work, the electrodes and their properties are presented and usability is demonstrate by the spectrochemistry on real sample.
Klíčová slova:
boron-doped diamond electrode; spectroelectrochemistry; UV-VIS-NIR spectroscopy; EPR spectroscopy
Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Transparent boron-doped diamond electrode (t-BDDE) for spectroelectrochemistry
In this work we have studied the properties of high quality boron-doped diamond layers prepared on transparent substrate and their use as working electrode for EPR/UV-VIS-NIR spectroelectrochemistry. ...
Transparent boron-doped diamond electrode (t-BDDE) for spectroelectrochemistry
Lušpai, K.; Keszeliová, D.; Barlog, M.; Petrák, Václav
2017 - anglický
In this work we have studied the properties of high quality boron-doped diamond layers prepared on transparent substrate and their use as working electrode for EPR/UV-VIS-NIR spectroelectrochemistry. Final goal of this work is to benefit from the wide potential window of boron-doped diamond electrodes even in the field of the EPR/UV-VIS-NIR spectroelectrochemistry. The studied electrodes are compatiable with UV-VIS-NIR measurements. Spectral background is stable within the whole electrochemical window. Some of the electrodes, with lower doping level, are also compatible with EPR spectroscopy. In this work, the electrodes and their properties are presented and usability is demonstrate by the spectrochemistry on real sample.
Klíčová slova:
boron-doped diamond electrode; spectroelectrochemistry; UV-VIS-NIR spectroscopy; EPR spectroscopy
Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Transparent boron-doped diamond electrode (t-BDDE) for spectroelectrochemistry
In this work we have studied the properties of high quality boron-doped diamond layers prepared on transparent substrate and their use as working electrode for EPR/UV-VIS-NIR spectroelectrochemistry. ...
Back electrode influence on opto-electronic properties of organic photovoltaic blend characterized by Kelvin probe force microscopy
Čermák, Jan; Miliaieva, Daria; Hoppe, H.; Rezek, Bohuslav
2017 - anglický
Organic photovoltaic (PV) system consisting of P3HT:PCBM blend layer was prepared with an aluminum (Al) back electrode. After the final thermal annealing the Al layer was partially removed. Kelvin Probe Force Microscopy (KPFM) was used to measure photovoltage response to illumination by a solar spectrum light as a function of time (up to 3 weeks). Comparison of the same KPFM measurement on the areas with and without Al revealed differences in both morphology and photovoltage response to illumination. The data are discussed with view to reducing degradation of organic PV devices.\n
Klíčová slova:
organic photovoltaics; Kelvin probe force microscopy; degradation
Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Back electrode influence on opto-electronic properties of organic photovoltaic blend characterized by Kelvin probe force microscopy
Organic photovoltaic (PV) system consisting of P3HT:PCBM blend layer was prepared with an aluminum (Al) back electrode. After the final thermal annealing the Al layer was partially removed. Kelvin ...
Preparing of the Chameleon coating by the Ion Jet Deposition method
Skocdopole, J.; Aversa, L.; Golan, Martin; Schenk, A.; Baldi, G.; Kratochvílová, Irena; Kalvoda, L.; Nozar, P.
2017 - anglický
Preparation of chameleon coatings using an Ionized Jet Deposition (IJD) technique is reported in the present paper. IJD is a new flexible method for thin film deposition developed by Noivion, Srl. The chameleon coatings are thin films characterised by a distinct change of their tribological properties according to the external conditions. The deposited films of SiC and TiN materials were examined by the Raman spectroscopy, SEM and XPS. The results of the Raman spectroscopy have proved an amorphous structure of SiC films. The data from XPS on TiN films have shown that the\nfilms are heavily oxidized, but also prove that the films are composed of TiN and pure Ti. The SEM provided information about the size of grains and particles constituting the deposited films, which is important for tribological properties of the films. Deposition of the chameleon coating is very complex problem and IJD could be ideal method for preparation of this coating.\n
Klíčová slova:
Ion Jet Deposition; Chameleon coating; Raman spectroscopy; scanning electron microscope; X-ray photoelectron spectroscopy
Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Preparing of the Chameleon coating by the Ion Jet Deposition method
Preparation of chameleon coatings using an Ionized Jet Deposition (IJD) technique is reported in the present paper. IJD is a new flexible method for thin film deposition developed by Noivion, Srl. The ...
NUŠL poskytuje centrální přístup k informacím o šedé literatuře vznikající v ČR v oblastech vědy, výzkumu a vzdělávání. Více informací o šedé literatuře a NUŠL najdete na webu služby.
Vaše náměty a připomínky posílejte na email nusl@techlib.cz
Provozovatel
Zahraniční báze