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Hybridní reaktivní HiPIMS depoziční systém s pro depozicioptických funkčních vrstev na bázi oxidů kovů
Hubička, Zdeněk; Čada, Martin; Olejníček, Jiří; Kšírová, Petra; Tvarog, Drahoslav
2018 - český
Zpráva popisuje hybridní reaktivní HiPIMS depoziční systém s pro depozici optických funkčních vrstev na bázi oxidů kovů s definovanými optickými vlastnostmi. The report describes a hybrid reactive HiPIMS deposition system for the deposition of functional metal oxide thin films with defined optical properties.
Klíčová slova:
plasma; discharge; thin film; HiPIMS
Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Hybridní reaktivní HiPIMS depoziční systém s pro depozicioptických funkčních vrstev na bázi oxidů kovů
Zpráva popisuje hybridní reaktivní HiPIMS depoziční systém s pro depozici optických funkčních vrstev na bázi oxidů kovů s definovanými optickými vlastnostmi....
Závěrečná zpráva z projektu - Bezpečné mazání paměťových čipů pomocí elektromagnetického pulsu
Fitl, Přemysl; Vrňata, M.; Fišer, L.; Novotný, Michal; Scholtz, V.; Vlček, J.; Tomeček, D.
2018 - český
Předmětem smluvního výzkumu byl teoretický rozbor a matematický model problematiky průniku elektromagnetického pulzu. Popis přípravy experimentu obsahující odpájení a odpouzdřování paměťových čipů, metodiky testování paměťových médií, stínění experimentu, stínění zkoumaného paměťového čipu, generování EMP, měření intenzity EMP. \nShrnutí výsledků provedeného experimentu.\nSouhrnná výzkumná zpráva byla předána zástupcům NUKIB dne 31.5.2018. \nZástupci NUKIB potvrdili převzetí zprávy. Oponentura výsledků projektu proběhla 27.6.2018 v budově NUKIB. Projekt byl splněn. Za vypracování této zprávy byla fakturována sjednaná částka.\n\n\n The subject of this contractual research was the theoretical analysis and the mathematical model of the problem of electromagnetic pulse penetration and involvement of storage function of the memory chips. The report includes description of the experimental preparation memory chip, methodology of memory media testing, experiment shielding, software scanning of the memory chip, EMP generation, EMP intensity measurement. \nSummary of results of experiments of EMP influence on the memory media.\nA comprehensive research report was handed over to NUKIB representatives on 31 May 2018. NUKIB representatives confirmed receipt of the report. \nDefense of the project results took place on 27.6.2018 in the NUKIB building. Project goals were fulfilled. The agreed amount was invoiced for this report.\n\n
Klíčová slova:
flash memory; memory erasing; electromagnetic pulse
Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Závěrečná zpráva z projektu - Bezpečné mazání paměťových čipů pomocí elektromagnetického pulsu
Předmětem smluvního výzkumu byl teoretický rozbor a matematický model problematiky průniku elektromagnetického pulzu. Popis přípravy experimentu obsahující odpájení a odpouzdřování paměťových čipů, ...
XXIII Czech-Polish seminar: Structural and ferroelectric phase transitions
Hlinka, Jiří; Pokorný, Jan; Bubnov, Alexej
2018 - anglický
This is the Book of Abstracts for the XXIII Czech-Polish Seminar (CPSEM-2018 conference) held in Kouty on May 21 - 25, 2018. The special objective of the conference is expressed in the conference subtitle: Structural and Ferroelectric Phase Transitions. The continuous worldwide interest to this conference series is proving that it has a respected position within the series of International/European conferences covering all interdisciplinary field of the research related to structural and ferroelectric phase transitions. At the CPSEM-2018 conference more than 110 participants from 14 countries all over the world presented 16 invited lectures and selected 36 oral contributions. About 60 posters were presented during two poster sessions.
Klíčová slova:
ferroelectric phase transitions; structural
Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
XXIII Czech-Polish seminar: Structural and ferroelectric phase transitions
This is the Book of Abstracts for the XXIII Czech-Polish Seminar (CPSEM-2018 conference) held in Kouty on May 21 - 25, 2018. The special objective of the conference is expressed in the conference ...
Modeling of monocrystalline magnesium microbeam bending
Němeček, J.; Maňák, Jan; Němeček, J.
2018 - anglický
This paper presents a numerical simulation of a micro-scale experiment on a magnesium alloy. Three dimensional numerical FE model with elastoplastic behavior respecting crystal anisotropy was used to fit experimental load displacement curves.
Klíčová slova:
magnesium; microbeams; crystal anisotropy; FE model
Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Modeling of monocrystalline magnesium microbeam bending
This paper presents a numerical simulation of a micro-scale experiment on a magnesium alloy. Three dimensional numerical FE model with elastoplastic behavior respecting crystal anisotropy was used to ...
Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles
Stuchlík, Jiří; Fajgar, Radek; Kupčík, Jaroslav; Remeš, Zdeněk; Stuchlíková, The-Ha
2018 - anglický
Substrates with ZnO (or ITO) conductive layers were covered by thin film of a-Si:H deposited by PECVD technique. Under a turbo-molecular vacuum (10-4 Pa) the reactive laser ablation (RLA) was used to cover this a-Si:H thin film by germanium NPs. The RLA was performed using focused excimer ArF laser beam (193 nm, 100 mJ/pulse) under SiH4 background atmosphere (0.5 Pa). As a target the elemental germanium was used. Reaction between ablated Ge and silane led to formation of Ge NPs covered by thin SiGe layer. Then the deposited NPs were covered and stabilized by a-Si:H layer by PECVD. Those two deposition processes was alternated and applied a few times. The Si:H thin films with integrated Ge NPs were characterized by microscopic, spectroscopic and diffraction techniques. I-V characteristics of final diode structures without and under illumination were measured as well as their electroluminescence behaviour.
Klíčová slova:
PECVD; a-Si:H diode structures; Ge; nanoparticles
Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles
Substrates with ZnO (or ITO) conductive layers were covered by thin film of a-Si:H deposited by PECVD technique. Under a turbo-molecular vacuum (10-4 Pa) the reactive laser ablation (RLA) was used to ...
Characterization of hydrogenated silicon thin films and diode structures with integrated silicon and germanium nanoparticles
Stuchlík, Jiří; Fajgar, R.; Remeš, Zdeněk; Kupčík, Jaroslav; Stuchlíková, Hana
2018 - anglický
P-I-N diode structures based on the thin films of amorphous hydrogenated silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique were prepared with embedded Si and Ge nanoparticles. The Reactive Laser Ablation (RLA) of germanium target was used to cover the intrinsic a-Si:H layer by Ge NPs under a low pressure of the silane. The RLA was performed using focused excimer ArF laser beam under SiH4 background atmosphere. Reaction between ablated Ge NPs and SiH4 led to formation of Ge NPs covered by thin GeSi:H layer. The deposited NPs were covered and stabilized by a-Si:H layer by PECVD. Those two deposition processes were alternated repeatedly. Volt-ampere characteristics of final diode structures were measured in dark and under illumination as well as their electroluminescence spectra.
Klíčová slova:
a-Si:H; PIN diode; thin films; reactive laser ablation; nanoparticles
Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Characterization of hydrogenated silicon thin films and diode structures with integrated silicon and germanium nanoparticles
P-I-N diode structures based on the thin films of amorphous hydrogenated silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique were prepared with embedded Si and Ge ...
Histology and micro-CT study of diamond-coated metal bone implants in rabbit femurs
Potocký, Štěpán; Ižák, Tibor; Dragounová, Kateřina; Kromka, Alexander; Rezek, Bohuslav; Mandys, V.; Bartoš, M.; Bačáková, Lucie; Sedmera, David
2018 - anglický
A conformal coating of a thin diamond layer on three-dimensional metal bone implants was shown directly on stainless steel and TiAl6V4 cortical screw implant using ultrasonic and composite polymer pretreatment method. The best conformation coverage was achieved in the case of the WO3 interlayer for both stainless steel and TiAl6V4 screws. The process of osteointegration of the screw implants into rabbit femurs is evidenced by the formation of a bone edge via desmogenous ossification around the screws in less than six months after implantation. A detailed evaluation of the tissue reaction around the implanted screws shows good biocompatibility of diamond-coated metal bone implants.
Klíčová slova:
screw implant; diamond coating; osteointegration; histology
Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Histology and micro-CT study of diamond-coated metal bone implants in rabbit femurs
A conformal coating of a thin diamond layer on three-dimensional metal bone implants was shown directly on stainless steel and TiAl6V4 cortical screw implant using ultrasonic and composite polymer ...
Electronic transfer between nanostructures. Negative differential resistance in conductive polymers.
Král, Karel; Menšík, Miroslav
2018 - anglický
The effect of negative differential resistance can be observed experimentally in some material systems based on polymers. These observation are explained usually to be due to the presence of certain carrier traps which can capture the carriers of the electric current. In the present theoretical work we are going to show that besides this carrier trapping origin of the negative differential resistance there can also be an intrinsic mechanism present, causing such an effect. Namely, instead of the traps, the electron-phonon interaction can cooperate with the tunneling of the charge carriers between their localized states and can provide the effect the negative differential resistance. This electron-phonon interaction is included in a non-perturbative way. The theory will be briefly summarized and explained.
Klíčová slova:
electronic transfer; charge transfer; nanostructures; quantum dots; nonequilibrium transport theory
Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Electronic transfer between nanostructures. Negative differential resistance in conductive polymers.
The effect of negative differential resistance can be observed experimentally in some material systems based on polymers. These observation are explained usually to be due to the presence of certain ...
Mechanical properties of Cr-DLC layers prepared by hybrid laser technology
Písařík, Petr; Jelínek, Miroslav; Remsa, J.; Tolde, Z.
2017 - anglický
Diamond like carbon (DLC) layers have excellent biological properties for use in medicine for coating implants, but poor adhesion to biomedical alloys (titanium alloys, chromium alloys and stainless steel). The adhesion can be improved by doping the DLC layer by chromium, as described in this article. Chromium doped diamond like carbon layers (Cr DLC) were deposited by hybrid deposition system using KrF excimer laser (deposition diamond like carbon - graphite target) and\nmagnetron sputtering (deposition chromium - chromium target). Carbon and chromium contents were determined by wavelength dispersive X-ray spectroscopy.\n
Klíčová slova:
DLC; chromium doped; mechanical properties; PLD
Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Mechanical properties of Cr-DLC layers prepared by hybrid laser technology
Diamond like carbon (DLC) layers have excellent biological properties for use in medicine for coating implants, but poor adhesion to biomedical alloys (titanium alloys, chromium alloys and stainless ...
Correlated microscopy of electronic and material properties of graphene grown on diamond thin films
Rezek, Bohuslav; Čermák, Jan; Varga, Marián; Tulic, S.; Skákalová, V.; Waitz, T.; Kromka, Alexander
2017 - anglický
In this work we compare growth of graphene on diamond thin films that enable large area processing. We use films with different crystal size and surface roughness to obtain deeper insight into formation and properties of GoD. The diamond films are coated by a nm thin sputtered Ni layer and heated to 900°C in a forming gas atmosphere (H2/Ar) to initiate catalytic thermal CVD process. The samples are cleaned from residual Ni after the growth process. We employ scanning electron microscopy, Raman micro-spectroscopy and Kelvin probe force microscopy to correlate material, structural, and electronic properties of graphene on diamond. We show how grain size and grain boundaries influence graphene growth and material and electronic properties. For instance we show that the grain boundaries (with non-diamond carbon phases) in diamond films have an important role. They influence the electronic properties and they are beneficial for forming graphene on diamond higher quality.
Klíčová slova:
graphene; diamond; microscopy; micro-spectroscopy; electronic properties
Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Correlated microscopy of electronic and material properties of graphene grown on diamond thin films
In this work we compare growth of graphene on diamond thin films that enable large area processing. We use films with different crystal size and surface roughness to obtain deeper insight into ...
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