Počet nalezených dokumentů: 430
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Book of Abstracts of the 28th Joint Seminar "Development of Materials Science in Research and Education"
Kožíšek, Zdeněk; Král, Robert; Zemenová, Petra
2018 - anglický
Topics:\n- Trends in development of materials research \n- Education of materials science at the universities\n- Information about the research programmes of individual institutions \n- Information on equipment for preparation and characterisation of materials \n- Results of materials science research Klíčová slova: material sciences Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Book of Abstracts of the 28th Joint Seminar "Development of Materials Science in Research and Education"

Topics:\n- Trends in development of materials research \n- Education of materials science at the universities\n- Information about the research programmes of individual institutions \n- Information on ...

Kožíšek, Zdeněk; Král, Robert; Zemenová, Petra
Fyzikální ústav, 2018

The hydrogen plasma doping of ZnO thin films and nanoparticles
Remeš, Zdeněk; Neykova, Neda; Potocký, Štěpán; Chang, Yu-Ying; Hsu, H.S.
2018 - anglický
The optical absorptance and photoluminescence studies has been applied on the hydrogen and oxygen plasma treated, nominally undoped ZnO thin films and aligned nanocolumns grown on the nucleated glass substrate by the hydrothermal process in an oil bath containing a flask with ZnO nutrient solution. The localized defect states at 2.3 eV below the optical absorption edge were detected by photothermal deflection spectroscopy (PDS) in a broad spectral range from near UV to near IR. The optical absorptance spectroscopy shows that hydrogen doping increases free electron concentration changing ZnO to be electrically conductive (hydrogen doping).\n Klíčová slova: ZnO; nanoparticles; hydrothermal growth; hotoluminescence spectroscopy; PDS Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
The hydrogen plasma doping of ZnO thin films and nanoparticles

The optical absorptance and photoluminescence studies has been applied on the hydrogen and oxygen plasma treated, nominally undoped ZnO thin films and aligned nanocolumns grown on the nucleated glass ...

Remeš, Zdeněk; Neykova, Neda; Potocký, Štěpán; Chang, Yu-Ying; Hsu, H.S.
Fyzikální ústav, 2018

Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure
Hájek, František; Hospodková, Alice; Oswald, Jiří; Slavická Zíková, Markéta
2018 - anglický
Luminescence of InGaN/GaN multiple quantum well (MQW) structure is strongly affected by spontaneous and piezoelectric polarizations. To suppress them, doping with shallow impurities (e. g. Si) can be used. This works presents the effects of Si doping in different layers around the MQW area. On the basis of photoluminescence and cathodoluminescence measurements and band structure simulation, the piezoelectric field is most efficiently reduced when both layers under and over MQW area are Si doped.\n Klíčová slova: nitrides; quantum wells; luminescence; semiconductor doping Dokument je dostupný na externích webových stránkách.
Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure

Luminescence of InGaN/GaN multiple quantum well (MQW) structure is strongly affected by spontaneous and piezoelectric polarizations. To suppress them, doping with shallow impurities (e. g. Si) can be ...

Hájek, František; Hospodková, Alice; Oswald, Jiří; Slavická Zíková, Markéta
Fyzikální ústav, 2018

XXIII Czech-Polish seminar: Structural and ferroelectric phase transitions
Hlinka, Jiří; Pokorný, Jan; Bubnov, Alexej
2018 - anglický
This is the Book of Abstracts for the XXIII Czech-Polish Seminar (CPSEM-2018 conference) held in Kouty on May 21 - 25, 2018. The special objective of the conference is expressed in the conference subtitle: Structural and Ferroelectric Phase Transitions. The continuous worldwide interest to this conference series is proving that it has a respected position within the series of International/European conferences covering all interdisciplinary field of the research related to structural and ferroelectric phase transitions. At the CPSEM-2018 conference more than 110 participants from 14 countries all over the world presented 16 invited lectures and selected 36 oral contributions. About 60 posters were presented during two poster sessions. Klíčová slova: ferroelectric phase transitions; structural Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
XXIII Czech-Polish seminar: Structural and ferroelectric phase transitions

This is the Book of Abstracts for the XXIII Czech-Polish Seminar (CPSEM-2018 conference) held in Kouty on May 21 - 25, 2018. The special objective of the conference is expressed in the conference ...

Hlinka, Jiří; Pokorný, Jan; Bubnov, Alexej
Fyzikální ústav, 2018

Modeling of monocrystalline magnesium microbeam bending
Němeček, J.; Maňák, Jan; Němeček, J.
2018 - anglický
This paper presents a numerical simulation of a micro-scale experiment on a magnesium alloy. Three dimensional numerical FE model with elastoplastic behavior respecting crystal anisotropy was used to fit experimental load displacement curves. Klíčová slova: magnesium; microbeams; crystal anisotropy; FE model Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Modeling of monocrystalline magnesium microbeam bending

This paper presents a numerical simulation of a micro-scale experiment on a magnesium alloy. Three dimensional numerical FE model with elastoplastic behavior respecting crystal anisotropy was used to ...

Němeček, J.; Maňák, Jan; Němeček, J.
Fyzikální ústav, 2018

Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles
Stuchlík, Jiří; Fajgar, Radek; Kupčík, Jaroslav; Remeš, Zdeněk; Stuchlíková, The-Ha
2018 - anglický
Substrates with ZnO (or ITO) conductive layers were covered by thin film of a-Si:H deposited by PECVD technique. Under a turbo-molecular vacuum (10-4 Pa) the reactive laser ablation (RLA) was used to cover this a-Si:H thin film by germanium NPs. The RLA was performed using focused excimer ArF laser beam (193 nm, 100 mJ/pulse) under SiH4 background atmosphere (0.5 Pa). As a target the elemental germanium was used. Reaction between ablated Ge and silane led to formation of Ge NPs covered by thin SiGe layer. Then the deposited NPs were covered and stabilized by a-Si:H layer by PECVD. Those two deposition processes was alternated and applied a few times. The Si:H thin films with integrated Ge NPs were characterized by microscopic, spectroscopic and diffraction techniques. I-V characteristics of final diode structures without and under illumination were measured as well as their electroluminescence behaviour. Klíčová slova: PECVD; a-Si:H diode structures; Ge; nanoparticles Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles

Substrates with ZnO (or ITO) conductive layers were covered by thin film of a-Si:H deposited by PECVD technique. Under a turbo-molecular vacuum (10-4 Pa) the reactive laser ablation (RLA) was used to ...

Stuchlík, Jiří; Fajgar, Radek; Kupčík, Jaroslav; Remeš, Zdeněk; Stuchlíková, The-Ha
Fyzikální ústav, 2018

Characterization of hydrogenated silicon thin films and diode structures with integrated silicon and germanium nanoparticles
Stuchlík, Jiří; Fajgar, R.; Remeš, Zdeněk; Kupčík, Jaroslav; Stuchlíková, Hana
2018 - anglický
P-I-N diode structures based on the thin films of amorphous hydrogenated silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique were prepared with embedded Si and Ge nanoparticles. The Reactive Laser Ablation (RLA) of germanium target was used to cover the intrinsic a-Si:H layer by Ge NPs under a low pressure of the silane. The RLA was performed using focused excimer ArF laser beam under SiH4 background atmosphere. Reaction between ablated Ge NPs and SiH4 led to formation of Ge NPs covered by thin GeSi:H layer. The deposited NPs were covered and stabilized by a-Si:H layer by PECVD. Those two deposition processes were alternated repeatedly. Volt-ampere characteristics of final diode structures were measured in dark and under illumination as well as their electroluminescence spectra. Klíčová slova: a-Si:H; PIN diode; thin films; reactive laser ablation; nanoparticles Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Characterization of hydrogenated silicon thin films and diode structures with integrated silicon and germanium nanoparticles

P-I-N diode structures based on the thin films of amorphous hydrogenated silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique were prepared with embedded Si and Ge ...

Stuchlík, Jiří; Fajgar, R.; Remeš, Zdeněk; Kupčík, Jaroslav; Stuchlíková, Hana
Fyzikální ústav, 2018

Histology and micro-CT study of diamond-coated metal bone implants in rabbit femurs
Potocký, Štěpán; Ižák, Tibor; Dragounová, Kateřina; Kromka, Alexander; Rezek, Bohuslav; Mandys, V.; Bartoš, M.; Bačáková, Lucie; Sedmera, David
2018 - anglický
A conformal coating of a thin diamond layer on three-dimensional metal bone implants was shown directly on stainless steel and TiAl6V4 cortical screw implant using ultrasonic and composite polymer pretreatment method. The best conformation coverage was achieved in the case of the WO3 interlayer for both stainless steel and TiAl6V4 screws. The process of osteointegration of the screw implants into rabbit femurs is evidenced by the formation of a bone edge via desmogenous ossification around the screws in less than six months after implantation. A detailed evaluation of the tissue reaction around the implanted screws shows good biocompatibility of diamond-coated metal bone implants. Klíčová slova: screw implant; diamond coating; osteointegration; histology Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Histology and micro-CT study of diamond-coated metal bone implants in rabbit femurs

A conformal coating of a thin diamond layer on three-dimensional metal bone implants was shown directly on stainless steel and TiAl6V4 cortical screw implant using ultrasonic and composite polymer ...

Potocký, Štěpán; Ižák, Tibor; Dragounová, Kateřina; Kromka, Alexander; Rezek, Bohuslav; Mandys, V.; Bartoš, M.; Bačáková, Lucie; Sedmera, David
Fyzikální ústav, 2018

Electronic transfer between nanostructures. Negative differential resistance in conductive polymers.
Král, Karel; Menšík, Miroslav
2018 - anglický
The effect of negative differential resistance can be observed experimentally in some material systems based on polymers. These observation are explained usually to be due to the presence of certain carrier traps which can capture the carriers of the electric current. In the present theoretical work we are going to show that besides this carrier trapping origin of the negative differential resistance there can also be an intrinsic mechanism present, causing such an effect. Namely, instead of the traps, the electron-phonon interaction can cooperate with the tunneling of the charge carriers between their localized states and can provide the effect the negative differential resistance. This electron-phonon interaction is included in a non-perturbative way. The theory will be briefly summarized and explained. Klíčová slova: electronic transfer; charge transfer; nanostructures; quantum dots; nonequilibrium transport theory Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Electronic transfer between nanostructures. Negative differential resistance in conductive polymers.

The effect of negative differential resistance can be observed experimentally in some material systems based on polymers. These observation are explained usually to be due to the presence of certain ...

Král, Karel; Menšík, Miroslav
Fyzikální ústav, 2018

Mechanical properties of Cr-DLC layers prepared by hybrid laser technology
Písařík, Petr; Jelínek, Miroslav; Remsa, J.; Tolde, Z.
2017 - anglický
Diamond like carbon (DLC) layers have excellent biological properties for use in medicine for coating implants, but poor adhesion to biomedical alloys (titanium alloys, chromium alloys and stainless steel). The adhesion can be improved by doping the DLC layer by chromium, as described in this article. Chromium doped diamond like carbon layers (Cr DLC) were deposited by hybrid deposition system using KrF excimer laser (deposition diamond like carbon - graphite target) and\nmagnetron sputtering (deposition chromium - chromium target). Carbon and chromium contents were determined by wavelength dispersive X-ray spectroscopy.\n Klíčová slova: DLC; chromium doped; mechanical properties; PLD Plné texty jsou dostupné na jednotlivých ústavech Akademie věd ČR.
Mechanical properties of Cr-DLC layers prepared by hybrid laser technology

Diamond like carbon (DLC) layers have excellent biological properties for use in medicine for coating implants, but poor adhesion to biomedical alloys (titanium alloys, chromium alloys and stainless ...

Písařík, Petr; Jelínek, Miroslav; Remsa, J.; Tolde, Z.
Fyzikální ústav, 2017

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